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Diodes Incorporated | DMT10H015LFG-7

Manufacturer Part #

DMT10H015LFG-7

MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMT10H015LFG-7 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 13.5mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 33.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 6.5ns
Turn-off Delay Time: 19.7ns
Rise Time: 7ns
Fall Time: 8.1ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Height - Max: 0.85mm
Length: 3.35mm
Input Capacitance: 1871pF
Package Style:  POWERDI3333-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
44 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,780.00
USD
Quantity
Unit Price
2,000
$1.39
4,000+
$1.37
Product Variant Information section