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onsemi | FDC638APZ

Manufacturer Part #

FDC638APZ

P-Channel 20 V 43 mOhm 2.5V PowerTrench® Specified Mosfet - SSOT-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2543
Product Specification Section
onsemi FDC638APZ - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 43mΩ
Rated Power Dissipation: 1.6W
Qg Gate Charge: 8nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 4.5A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 48ns
Rise Time: 20ns
Fall Time: 47ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.8V
Technology: PowerTrench
Input Capacitance: 750pF
Package Style:  TSOT-23-6
Mounting Method: Surface Mount
Features & Applications

The FDC638APZ is a part of FDC638 series 20 V 43 mΩ P-Channel 2.5 V specified MOSFET is produced using advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • Max rDS(on) = 43 mΩ at VGS = –4.5 V, ID = –4.5 A
  • Max rDS(on) = 68 mΩ at VGS = –2.5 V, ID = –3.8 A
  • Low gate charge (8nC typical)
  • High performance trench technology for extremely low rDS(on)
  • SuperSOTTM –6 package
  • RoHS Compliant

Applications:

  • Battery Power Applications
  • Switching and Power Management
  • Battery charging circuits
  • DC/DC conversion
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$825.00
USD
Quantity
Unit Price
3,000
$0.275
9,000
$0.27
15,000+
$0.265
Product Variant Information section