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onsemi | FDMC8651

Manufacturer Part #

FDMC8651

30/12V NCH POWER TRENCH MOSFET

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDMC8651 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 6.1mΩ
Rated Power Dissipation: 2.3|W
Qg Gate Charge: 27.2nC
Package Style:  POWER 33-8
Mounting Method: Surface Mount
Features & Applications

This FDMC8651 is a 30 V N-Channel MOSFET is produced using advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance

Features:

  • Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 13.5 A
  • Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 11.8 A
  • Low Profile - 1mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

Applications:

  • Automation
  • Consumer Appliances
  • Building & Home Control
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
42 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$4,440.00
USD
Quantity
Unit Price
3,000+
$1.48
Product Variant Information section