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onsemi | FDMS3662

Manufacturer Part #

FDMS3662

75V, 49A, 14.5M OHM N-CH POWER TRENCH MOSFET

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDMS3662 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 14.8mΩ
Rated Power Dissipation: 104|W
Qg Gate Charge: 75nC
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS3662 is a 100 V 14.8 mΩ N-Channel Power Trench Mosfet.This N-Channel MOSFET is produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance

Features:

  • Max rDS(on) = 14.8 mΩ at VGS = 10 V, ID = 8.9 A
  • Advanced Package and Silicon combination for low rDS(on)
  • MSL1 robust package design
  • 100% UIL Tested
  • RoHS Compliant

Applications:

  • Automation
  • Building & Home Control
  • Consumer Appliances
  • Medical Electronics/Devices
  • Military & Civil Aerospace
  • Mobile Comm Infrastructure
  • DC-DC Conversion
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
38 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$10,860.00
USD
Quantity
Unit Price
3,000+
$3.62
Product Variant Information section