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onsemi | FDMS3672

Manufacturer Part #

FDMS3672

100V, 22A,23 OHM, NCH ULTRAFET TRENCH MOSFET

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDMS3672 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 40mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 44nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 7.4A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 36ns
Rise Time: 20ns
Fall Time: 16ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 0.75mm
Length: 5mm
Input Capacitance: 2015pF
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS3672 is a 100 V 23 mΩ N-Channel UltraFET Trench Mosfet this devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC-to-DC converters

Features:

  • Maximum RDS(on) = 23 mΩ at VGS = 10 V, ID = 7.4 A
  • Maximum RDS(on) = 29 mΩat VGS= 6 V, ID = 6.6 A
  • Typical Qg = 31 nC at VGS = 10 V
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • RoHS Compliant

Applications:

  • Automation
  • Building & Home Control
  • Consumer Appliances
  • Medical Electronics/Devices
  • Military & Civil Aerospace
  • Mobile Comm Infrastructure
  • DC-DC Conversion
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$10,410.00
USD
Quantity
Unit Price
3,000+
$3.47
Product Variant Information section