text.skipToContent text.skipToNavigation

Manufacturer Part #

FDMS5352

60V, 49A, 6.7M OHM N-CHANNEL POWER TRENCH MOSFET

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2530
Product Specification Section
onsemi FDMS5352 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 6.7mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 131nC
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS5352 is a N-Channel MOSFET is produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features:

  • Max rDS(on) = 6.7 m? at VGS = 10 V, ID = 13.6 A
  • Max rDS(on) = 8.2 m? at VGS = 4.5 V, ID = 12.3 A
  • Advanced Package and Silicon combination for low rDS(on)
  • MSL1 robust package design
  • 100% UIL Tested
  • RoHS Compliant

Applications:

  • DC - DC Conversion

View the Complete family of FDMS Mosfet Transistors

Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
34 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$4,500.00
USD
Quantity
Unit Price
3,000+
$1.50
Product Variant Information section