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onsemi | FDMS86500L

Manufacturer Part #

FDMS86500L

FDMS86500L Series 60 V 158 A 2.5 mOhm N-Channel PowerTrench® MOSFET - POWER-56

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2524
Product Specification Section
onsemi FDMS86500L - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 3.7mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 165nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 25A
Turn-on Delay Time: 27ns
Turn-off Delay Time: 63ns
Rise Time: 28ns
Fall Time: 16ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1.05mm
Length: 5.1mm
Input Capacitance: 9420pF
Package Style:  POWER 56-8
Mounting Method: Surface Mount
Features & Applications

The FDMS86500L N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features:

  • Max rDS(on) = 2.5 mO at VGS = 10 V, ID = 25 A
  • Max rDS(on) = 3.7 mO at VGS = 4.5 V, ID = 20 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications:

  • Primary Switch in isolated DC-DC
  • Synchronous Rectifier
  • Load Switch

View the complete FDMS8x series Mosfets

Pricing Section
Global Stock:
411,000
USA:
411,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$9,750.00
USD
Quantity
Unit Price
3,000+
$3.25
Product Variant Information section