text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. FDN339AN

onsemi | FDN339AN

Manufacturer Part #

FDN339AN

Single N-Channel 20 V 0.061 Ohm 0.5 W PowerTrenChannel SMT Mosfet - SSOT-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2603
Product Specification Section
onsemi FDN339AN - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 0.46W
Qg Gate Charge: 7nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 3A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 18ns
Rise Time: 10ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.85V
Technology: PowerTrench
Input Capacitance: 700pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The FDN339AN is a 20 V 35 mΩ N-Channel 2.5 V specified MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V, RDS(ON) = 0.050 Ω @ VGS = 2.5 V.
  • Low gate charge (7nC typical).
  • High performance trench technology for extremelylow RDS(ON) .
  • High power and current handling capability.

Applications:

  • DC/DC converter
  • Load switch
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$930.00
USD
Quantity
Unit Price
3,000
$0.31
6,000
$0.305
9,000
$0.30
15,000+
$0.295
Product Variant Information section