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onsemi | FDN360P

Manufacturer Part #

FDN360P

Single P-Channel 30 V 80 mOhm PowerTrench Mosfet - SSOT-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2523
Product Specification Section
onsemi FDN360P - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 80mΩ
Rated Power Dissipation: 0.46W
Qg Gate Charge: 6.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 11ns
Rise Time: 13ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.9V
Technology: PowerTrench
Input Capacitance: 298pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications
The FDN360P is a 30 V 80 mΩ single P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • -2 A, -30 V
  • RDS(on) = 80 mΩ @ VGS = -10 V
  • RDS(on) = 125 mΩ @ VGS = -4.5 V
  • Low gate charge (6.2nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • High power version of industry Standard SOT-23package

Applications:

  • Low voltage and battery powered application
  • Low in-line power loss and fast switching
Pricing Section
Global Stock:
24,000
USA:
24,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$336.00
USD
Quantity
Unit Price
3,000
$0.112
9,000
$0.11
15,000
$0.109
30,000
$0.108
60,000+
$0.106
Product Variant Information section