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Manufacturer Part #
FDS4435BZ
P-Channel 30 V 20 mΩ Surface Mount PowerTrench Mosfet - SOIC-8
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:SOIC-8 | ||||||||||
| Date Code: | 2526 | ||||||||||
onsemi FDS4435BZ - Product Specification
Shipping Information:
ECCN:
PCN Information:
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDS4435BZ&field4=onsemi&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fds4435bz-onsemi-9306010
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDS4435BZ&field4=onsemi&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fds4435bz-onsemi-9306010
onsemi FDS4435BZ - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 20mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 28nC |
| Package Style: | SOIC-8 |
Features & Applications
The FDS4435BZ is a 20 mOhm and 30 V P-channel powertrench MOSFET. It is available in surface mount SOIC-8 package.
This P-Channel MOSFET is produced using semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features:
- Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A
- Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A
- Extended VGSS range (–25V) for battery applications
- HBM ESD protection level of ±3.8KV typical
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Termination is Lead–free and RoHS compliant
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOIC-8