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onsemi | FDS89161LZ

Manufacturer Part #

FDS89161LZ

FDS89161LZ Series 100 V 2.7 A 105 mOhm Dual N-Ch PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS89161LZ - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 105mΩ
Rated Power Dissipation: 1.6|W
Qg Gate Charge: 3.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.7A
Turn-on Delay Time: 3.8ns
Turn-off Delay Time: 9.5ns
Rise Time: 1.2ns
Fall Time: 1.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.7V
Technology: PowerTrench
Height - Max: 1.575mm
Length: 4.9mm
Input Capacitance: 227pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,175.00
USD
Quantity
Unit Price
2,500
$1.27
5,000+
$1.25
Product Variant Information section