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onsemi | FDS8949

Manufacturer Part #

FDS8949

Dual N-Channel 40 V 29 mOhm Logic Level PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2505
Product Specification Section
onsemi FDS8949 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 29mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 7.7nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS8949 is a 40 V 29 mΩ N-Channel Logic Level MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.    

Features:

  • Max rDS(on) = 29 mΩ at VGS = 10 V
  • Max rDS(on) = 36 mΩ at VGS = 4.5 V
  • Low gate charge
  • High performance trench technology
  • High power and current handling capability
  • RoHS compliant

Applications:

  • Inverter
  • Power suppliers
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$837.50
USD
Quantity
Unit Price
2,500
$0.335
5,000
$0.33
7,500
$0.325
12,500+
$0.32
Product Variant Information section