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onsemi | FQB34P10TM

Manufacturer Part #

FQB34P10TM

P-Channel 100 V 0.06 Ohm Surface Mount Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2429
Product Specification Section
onsemi FQB34P10TM - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.06Ω
Rated Power Dissipation: 3.75|W
Qg Gate Charge: 110nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FQB34P10TM is a 100 V 0.06 Ω P-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode

Features:

  • -33.5 A, -100 V, RDS(on) = 0.06 Ω@VGS = -10 V
  • Low gate charge (typical 85 nC)
  • Low Crss (typical 170 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating

Applications:

  • High efficiency switching DC/DC converters
  • Switch mode power supply
  • Motor control
  • Audio amplifier
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
2,400
Factory Lead Time:
9 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,240.00
USD
Quantity
Unit Price
800
$1.55
1,600
$1.54
2,400
$1.53
4,000+
$1.51
Product Variant Information section