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  6. FQB4N80TM

onsemi | FQB4N80TM

Manufacturer Part #

FQB4N80TM

N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FQB4N80TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 3.6Ω
Rated Power Dissipation: 3.13|W
Qg Gate Charge: 25nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FQB4N80TM is a N-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode

Features:

  • 3.9 A, 800 V, RDS(on) = 3.6 Ω @VGS = 10 V
  • Low gate charge ( typical 19 nC)
  • Low Crss ( typical 8.6 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • High efficiency S.M.P.S
  • Electronic lamp ballast

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
800
Multiple Of:
800
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Total
$864.00
USD
Quantity
Unit Price
800
$1.08
2,400
$1.07
4,000+
$1.06
Product Variant Information section