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Manufacturer Part #

FQD12N20LTM

Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2436
Product Specification Section
onsemi FQD12N20LTM - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.32Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 21nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9A
Turn-on Delay Time: 40ns
Turn-off Delay Time: 130ns
Rise Time: 390ns
Fall Time: 250ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: DMOS
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 830pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD12N20L is a 200 V 0.28 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.  

Features:

  • 9.0 A, 200 V,
  • R DS(on) = 0.28 Ω @V GS = 10 V
  • Low gate charge ( typical 16 nC)
  • Low Crss ( typical 17 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Low level gate drive requirement allowing direct opration from logic drivers

Applications:

  • High efficiency switching DC/DC converters
  • Switch mode power supply
  • Motor control
  • Audio amplifier
  • DC-AC converters

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$850.00
USD
Quantity
Unit Price
2,500
$0.34
5,000
$0.335
7,500
$0.33
12,500+
$0.325
Product Variant Information section