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onsemi | HUF76629D3ST

Manufacturer Part #

HUF76629D3ST

N-Channel 100 V 0.054 Ω Surface Mount Logic Level UltraFET Mosfet-TO-252AA

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi HUF76629D3ST - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.054Ω
Rated Power Dissipation: 110|W
Qg Gate Charge: 38nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The HUF76629D3ST is a N-Channel 100 V 0.054 Ohm Logic Level UltraFET Power Mosfet.

Features:

  • Ultra Low On-Resistance
  • rDS(ON) = 0.052 Ω, VGS = 10 V
  • rDS(ON) = 0.054 Ω, VGS = 5 V
  • Simulation Models
  • Temperature Compensated PSPICE® and SABERTMElectrical Models
  • SPICE and SABER Thermal Impedance Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Switching Time vs RGS Curves  

Applications:

  • TBA
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$11,675.00
USD
Quantity
Unit Price
2,500+
$4.67
Product Variant Information section