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Infineon Technologies | IAUS165N08S5N029ATMA1

Manufacturer Part #

IAUS165N08S5N029ATMA1

80Volt, 165Amp, 2.9mohm, 70QgnC, TO-LL 8L, OptiMOS™ 5

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IAUS165N08S5N029ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 2.9mΩ
Rated Power Dissipation: 167W
Qg Gate Charge: 70nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 165A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 23ns
Rise Time: 9ns
Fall Time: 29ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 4900pF
Series: OptiMOS 5
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1800
Multiple Of:
1800
Total
$5,634.00
USD
Quantity
Unit Price
1,800+
$3.13
Product Variant Information section