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Infineon Technologies | IAUT300N08S5N012ATMA2

Manufacturer Part #

IAUT300N08S5N012ATMA2

IAUT300Nxx Series 80 V 1.2 mOhm 300 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2545
Product Specification Section
Infineon Technologies IAUT300N08S5N012ATMA2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 1.2mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 178nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 300A
Turn-on Delay Time: 31ns
Turn-off Delay Time: 69ns
Rise Time: 19ns
Fall Time: 55ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 12500pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$12,000.00
USD
Quantity
Unit Price
2,000+
$6.00
Product Variant Information section