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Manufacturer Part #

IMZ120R030M1HXKSA1

IMZ Series 1200 V 30 mOhm 63 nC Through Hole Silicon Carbide Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2051
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 42mΩ
Rated Power Dissipation: 227W
Qg Gate Charge: 63nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 56A
Turn-on Delay Time: 7.7ns
Turn-off Delay Time: 17.3ns
Rise Time: 11.6ns
Fall Time: 11.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 2120pF
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
31,680
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
30
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,124.40
USD
Quantity
Web Price
30
$37.48
60
$30.96
90
$30.38
120+
$29.98
Product Variant Information section