text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IMZ120R220M1HXKSA1

Infineon Technologies | IMZ120R220M1HXKSA1

Manufacturer Part #

IMZ120R220M1HXKSA1

IMZ Series 1200 V 220 mOhm 8.5 nC Through Hole Silicon Carbide Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IMZ120R220M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 294mΩ
Rated Power Dissipation: 75W
Qg Gate Charge: 8.5nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 13A
Turn-on Delay Time: 4.8ns
Turn-off Delay Time: 9.8ns
Rise Time: 1ns
Fall Time: 12.7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 289pF
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
240
Multiple Of:
240
Total
$1,620.00
USD
Quantity
Unit Price
240
$6.75
480
$6.72
720
$6.70
960
$6.69
1,200+
$6.65
Product Variant Information section