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Infineon Technologies | IMZA65R027M1HXKSA1

Manufacturer Part #

IMZA65R027M1HXKSA1

Single N-Channel 650 V 59 A 189 W CoolSiC™ Through Hole- Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IMZA65R027M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 59A
Input Capacitance: 2131pF
Power Dissipation: 189W
Operating Temp Range: -55°C to +150°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
240
Multiple Of:
30
Total
$2,085.60
USD
Quantity
Unit Price
30
$8.78
90
$8.71
120
$8.69
300
$8.64
450+
$8.58
Product Variant Information section