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Manufacturer Part #
IPB180N04S401ATMA1
Single N-Channel 40 V 1.3 mOhm 135 nC OptiMOS™ Power Mosfet - D2PAK-7
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-7 (D2PAK7) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IPB180N04S401ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location/Material change
02/09/2024 Details and Download
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPB180N04S401ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/ipb180n04s401atma1-infineon-9060185
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPB180N04S401ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/ipb180n04s401atma1-infineon-9060185
Infineon IPB180N04S401ATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 1.3mΩ |
| Rated Power Dissipation: | 188|W |
| Qg Gate Charge: | 135nC |
| Package Style: | TO-263-7 (D2PAK7) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
9 Weeks
Quantity
Unit Price
1,000
$1.47
2,000
$1.46
4,000
$1.45
5,000+
$1.44
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount