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Infineon Technologies | IPB180P04P4L02ATMA2

Manufacturer Part #

IPB180P04P4L02ATMA2

-40V, -180A, 2.4 Ohm, P-Channel, DPAK, MOSFET

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IPB180P04P4L02ATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2.4mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 220nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 180A
Turn-on Delay Time: 32ns
Turn-off Delay Time: 146ns
Rise Time: 28ns
Fall Time: 119ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 14400pF
Series: OptiMOS-P2
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,660.00
USD
Quantity
Unit Price
1,000
$1.66
2,000
$1.65
3,000
$1.64
5,000+
$1.62
Product Variant Information section