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Infineon | IPB60R040C7ATMA1

Manufacturer Part #

IPB60R040C7ATMA1

IPB60R040 Series N-Channel 650 V 50 A Surface Mount Power MosFet - PG-TO263-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2508
Product Specification Section
Infineon IPB60R040C7ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 40mΩ
Rated Power Dissipation: 227W
Qg Gate Charge: 107nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 18.5ns
Turn-off Delay Time: 81ns
Rise Time: 11ns
Fall Time: 3.2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 4340pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$5,470.00
USD
Quantity
Unit Price
1,000+
$5.47
Product Variant Information section