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Infineon Technologies | IPB60R165CPATMA1

Manufacturer Part #

IPB60R165CPATMA1

Single N-Channel 600 V 165 mOhm 39 nC CoolMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IPB60R165CPATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 165mΩ
Rated Power Dissipation: 192|W
Qg Gate Charge: 39nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,050.00
USD
Quantity
Unit Price
1,000
$2.05
2,000
$2.04
3,000
$2.03
4,000+
$2.01
Product Variant Information section