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Infineon Technologies | IPC100N04S51R2ATMA1

Manufacturer Part #

IPC100N04S51R2ATMA1

IPC100N04S5 Series 40 V 1.2 mOhm 100 A OptiMOS™-5 Power-Transistor-TDSON-8-34

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2340
Product Specification Section
Infineon Technologies IPC100N04S51R2ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.2mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 99nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 21ns
Rise Time: 7ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 5750pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$9,300.00
USD
Quantity
Unit Price
5,000+
$1.86
Product Variant Information section