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Infineon | IPD050N10N5ATMA1

Manufacturer Part #

IPD050N10N5ATMA1

Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD050N10N5ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 5mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 51nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 27ns
Rise Time: 7ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 3600pF
Series: OptiMOS 5
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,625.00
USD
Quantity
Unit Price
2,500
$1.05
5,000+
$1.04
Product Variant Information section