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Infineon Technologies | IPD600N25N3GATMA1

Manufacturer Part #

IPD600N25N3GATMA1

Single N-Channel 250 V 60 mOhm 22 nC OptiMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IPD600N25N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 136|W
Qg Gate Charge: 22nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$5,725.00
USD
Quantity
Unit Price
2,500+
$2.29
Product Variant Information section