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Infineon Technologies | IPD60R2K1CEAUMA1

Manufacturer Part #

IPD60R2K1CEAUMA1

Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IPD60R2K1CEAUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 2.1Ω
Rated Power Dissipation: 22W
Qg Gate Charge: 6.7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.7A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 30ns
Rise Time: 7ns
Fall Time: 50ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 140pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,187.50
USD
Quantity
Unit Price
2,500
$0.475
5,000
$0.47
10,000
$0.465
12,500+
$0.46
Product Variant Information section