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Infineon | IPP032N06N3GXKSA1

Manufacturer Part #

IPP032N06N3GXKSA1

Single N-Channel 60 V 3.2 mOhm 165 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP032N06N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 3.2mΩ
Rated Power Dissipation: 188W
Qg Gate Charge: 165nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 35ns
Turn-off Delay Time: 62ns
Rise Time: 120ns
Fall Time: 20ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: OptiMOS
Height - Max: 4.57mm
Length: 10.36mm
Input Capacitance: 10000pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$260.00
USD
Quantity
Unit Price
50
$0.53
200
$0.52
750
$0.505
2,000
$0.495
5,000+
$0.48
Product Variant Information section