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  6. IPT017N10NM5LF2ATMA1

Infineon | IPT017N10NM5LF2ATMA1

Manufacturer Part #

IPT017N10NM5LF2ATMA1

100 V 32 A 321 A 3.8W SMT N-Channel OptiMOS™ 5 Linear FET - PG-HSOF-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPT017N10NM5LF2ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.6mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 206nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 32A
Operating Temp Range: -55°C to +175°C
Input Capacitance: 17000pF
Package Style:  PG-HSOF-8-1
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
2,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$5,640.00
USD
Quantity
Unit Price
2,000+
$2.82
Product Variant Information section