Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.
Manufacturer Part #
IPW65R045C7FKSA1
N-Channel 650 V 45 mOhm CoolMOSTM C7 Power Transistor-PG-TO-247-3
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2345 | ||||||||||
Infineon IPW65R045C7FKSA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Introduction of an additional assembly and test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) for TO247-3 products.Detailed change information:Subject:Introduction of an additional assembly and final test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) forTO247-3 products.Reason :Expansion of assembly and test location to assure continuity and increase of supply
Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3Subject Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3.Reason Expansion of assembly and test location to assure continuity and increase of supply.Intended start of delivery 2023-02-25, or earlier, depending on customer?s approval
Part Status:
Infineon IPW65R045C7FKSA1 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 45mΩ |
| Rated Power Dissipation: | 227|W |
| Qg Gate Charge: | 93nC |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole