text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IQE013N04LM6CGATMA1

Infineon Technologies | IQE013N04LM6CGATMA1

Manufacturer Part #

IQE013N04LM6CGATMA1

40V 205A 1.35 mΩ N-ch PQFN 3.3x3.3 Source-Down

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2508
Product Specification Section
Infineon Technologies IQE013N04LM6CGATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.35mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 41nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 31A
Turn-on Delay Time: 7.1ns
Turn-off Delay Time: 21ns
Rise Time: 3.6ns
Fall Time: 4.9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 2900pF
Series: OptiMOS
Mounting Method: Surface Mount
Pricing Section
Global Stock:
10,000
USA:
10,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$15,350.00
USD
Quantity
Unit Price
5,000+
$3.07
Product Variant Information section