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Infineon Technologies | IRF100P218AKMA1

Manufacturer Part #

IRF100P218AKMA1

100v,209a,1.28MOHM,TO-247 mosfet

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRF100P218AKMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.28mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 330nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 209A
Turn-on Delay Time: 50ns
Turn-off Delay Time: 170ns
Rise Time: 110ns
Fall Time: 120ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.8V
Input Capacitance: 24000pF
Series: StrongIRFET
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
400
Multiple Of:
400
Total
$4,656.00
USD
Quantity
Unit Price
400+
$11.64
Product Variant Information section