text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRF1310NSTRLPBF

Infineon Technologies | IRF1310NSTRLPBF

Manufacturer Part #

IRF1310NSTRLPBF

Single N-Channel 100V 0.036 Ohm 110 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRF1310NSTRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.036Ω
Rated Power Dissipation: 3.8W
Qg Gate Charge: 110nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 42A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 45ns
Rise Time: 56ns
Fall Time: 40ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Input Capacitance: 1900pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
800
Multiple Of:
800
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,680.00
USD
Quantity
Unit Price
800
$2.10
1,600
$2.08
2,400
$2.07
4,000+
$2.05
Product Variant Information section