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Manufacturer Part #

IRF1405STRLPBF

Single N-Channel 55 V 5.3 mOhm 260 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF1405STRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 5.3mΩ
Rated Power Dissipation: 200W
Qg Gate Charge: 260nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 131A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 130ns
Rise Time: 190ns
Fall Time: 110ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 5480pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
3,200
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$544.00
USD
Quantity
Unit Price
800
$0.68
1,600
$0.67
2,400
$0.665
4,000+
$0.65
Product Variant Information section