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Infineon Technologies | IRF2807STRLPBF

Manufacturer Part #

IRF2807STRLPBF

Single N-Channel 75V 13 mOhm 160 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRF2807STRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 13mΩ
Rated Power Dissipation: 230W
Qg Gate Charge: 160nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 82A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 49ns
Rise Time: 64ns
Fall Time: 48ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Input Capacitance: 3820pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$1,192.00
USD
Quantity
Unit Price
800
$1.49
1,600
$1.48
2,400
$1.47
4,000+
$1.45
Product Variant Information section