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Manufacturer Part #

IRF3805PBF

Single N-Channel 55 V 3.3 mOhm 190 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 3.3mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 190nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,340.00
USD
Quantity
Web Price
50
$1.61
200
$1.38
500
$1.34
1,250
$1.31
2,000+
$1.29
Product Variant Information section