Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Référence fabricant
IRF540NSTRLPBF
Single N-Channel 100V 44 mOhm 71 nC HEXFET® Power Mosfet - D2PAK
|
|
|||||||||||
|
|
|||||||||||
| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :800 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount |
||||||||||
| Code de date: | |||||||||||
Infineon IRF540NSTRLPBF - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Statut du produit:
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF540NSTRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf540nstrlpbf-infineon-1172246
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF540NSTRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf540nstrlpbf-infineon-1172246
Infineon IRF540NSTRLPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 44mΩ |
| Rated Power Dissipation: | 130W |
| Qg Gate Charge: | 71nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 33A |
| Turn-on Delay Time: | 11ns |
| Turn-off Delay Time: | 39ns |
| Rise Time: | 35ns |
| Fall Time: | 35ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 1960pF |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
800 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount