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Infineon Technologies | IRF5Y9540CM

Manufacturer Part #

IRF5Y9540CM

P Channel 100 V 18 A Through Hole HEXFET Power Mosfet - TO-257AA

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
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Product Specification Section
Infineon Technologies IRF5Y9540CM - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.117Ω
Rated Power Dissipation: 75W
Qg Gate Charge: 109nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 29ns
Turn-off Delay Time: 87ns
Rise Time: 135ns
Fall Time: 84ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 1390pF
Series: HEXFET
Package Style:  TO-257AA
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
50
Multiple Of:
1
Total
$14,800.00
USD
Quantity
Unit Price
1
$310.80
2
$306.27
3
$303.65
4
$301.81
5+
$296.00
Product Variant Information section