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Vishay | IRF610STRLPBF

Manufacturer Part #

IRF610STRLPBF

MOSFET N-Chan 200V 3.3 Amp

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay IRF610STRLPBF - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 1.5Ω
Rated Power Dissipation: 3W
Qg Gate Charge: 8.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.3A
Turn-on Delay Time: 8.2ns
Turn-off Delay Time: 14ns
Rise Time: 17ns
Fall Time: 8.9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 140pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$648.00
USD
Quantity
Unit Price
800
$0.81
1,600
$0.795
2,400
$0.79
4,000
$0.785
8,000+
$0.765
Product Variant Information section