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Manufacturer Part #

IRF7313TRPBF

Single N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2423
Product Specification Section
Infineon IRF7313TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.046Ω
Rated Power Dissipation: 2W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6.5A
Turn-on Delay Time: 8.1ns
Turn-off Delay Time: 26ns
Rise Time: 8.9ns
Fall Time: 17ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Generation V
Height - Max: 1.5mm
Length: 5mm
Input Capacitance: 650pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The IRF7313TRPBF is a fifth generation HEXFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.  The SO-08 has been modified through a customerized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramtically reduced board space.  The package is designed for vapor phase, infra red, or wave soldering techniques.  For more information, please see the datasheet above.

 

The IRF7313TRPBF is a 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package.  TR indicates Tape and Reel, and PBF indicates Lead Free.
Pricing Section
Global Stock:
16,000
USA:
16,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$840.00
USD
Quantity
Unit Price
4,000
$0.21
8,000
$0.205
20,000+
$0.199
Product Variant Information section