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Infineon Technologies | IRF7469TRPBF

Manufacturer Part #

IRF7469TRPBF

Single N-Channel 40 V 21 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IRF7469TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 17mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 14ns
Rise Time: 2.2ns
Fall Time: 3.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 2000pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The IRF7469TRPBF is a Single N-Channel Hexfet Power Mosfet, available in surface mount SOIC-8 package.

Benefits:

  • Ultra-Low Gate Impedance
  • Very Low RDS(on)
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
  • High Frequency Buck Converters for Computer Processor Power
  • Lead-Free
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
4000
Multiple Of:
4000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,680.00
USD
Quantity
Unit Price
4,000+
$0.92
Product Variant Information section