Référence fabricant
IRFB260NPBF
Single N-Channel 200 V 40 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
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Infineon IRFB260NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Subject: Introduction of an additional wafer production at Infineon Technologies Kulim, Malaysia and change of wafer diameter from 150mm to 200mm for several G5.5 MOSFETReason: The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy.
Statut du produit:
Infineon IRFB260NPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 40mΩ |
| Rated Power Dissipation: | 380|W |
| Qg Gate Charge: | 220nC |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole