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Infineon Technologies | IRFB5615PBF

Manufacturer Part #

IRFB5615PBF

Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2345
Product Specification Section
Infineon Technologies IRFB5615PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 39mΩ
Rated Power Dissipation: 144|W
Qg Gate Charge: 26nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The IRFB5615PBF is a 150 V 144 W 26 nC N-Channel Digital Audio MOSFET specifically designed for Class-D audio amplifier applications. Operating temperature ranges from -55°C to 175 °C and available in TO-220AB Flange Mount Package.

MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI.

Features:

  • Key Parameters Optimized for Class-D Audio Amplifier Applications
  • Low RDSON for Improved Efficiency
  • Low QG and QSW for Better THD and Improved Efficiency
  • Low QRR for Better THD and Lower EMI
  • 175°C Operating Junction Temperature for Ruggedness
  • Can Deliver up to 300W per Channel into4ΩLoad in Half-Bridge Configuration Amplifier
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$2,150.00
USD
Quantity
Unit Price
50
$2.22
200
$2.18
750
$2.15
1,250
$2.14
2,500+
$2.10
Product Variant Information section