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Infineon Technologies | IRFB7446PBF

Manufacturer Part #

IRFB7446PBF

Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2443
Product Specification Section
Infineon Technologies IRFB7446PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 3.3mΩ
Rated Power Dissipation: 99W
Qg Gate Charge: 62nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 123A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 33ns
Rise Time: 34ns
Fall Time: 23ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 3183pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The IRFB7446PbF is a HEXFET power MOSFET with a maximum ON state resistance of 3.3 mΩ, available in through hole TO-220AB package.

Benefits:

  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free

Applications:

  • Brushed Motor drive applications
  • BLDC Motor drive applications
  • Battery powered circuits
  • Half-bridge and full-bridge topologies
  • Synchronous rectifier applications
  • Resonant mode power supplies
  • OR-ing and redundant power switches
  • DC/DC and AC/DC converters
  • DC/AC Inverters

 

 

Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$88.00
USD
Quantity
Unit Price
50
$1.76
200
$1.73
750
$1.71
1,250
$1.70
2,500+
$1.67
Product Variant Information section