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Manufacturer Part #
IRFH5015TRPBF
Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:PQFN 5 x 6 mm Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Infineon IRFH5015TRPBF - Product Specification
Shipping Information:
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PCN Information:
Detailed change informationSubject:Change of passivation at Infineon Technologies Kulim, Malaysia, for dedicated TISON, TDSON, TSDSON and IQFN productsDescription OldDie passivation - Epoxy resin material ANew:- Epoxy resin material BReason:Ensuring continuity of supply due to end of life of material from supplierIntended start of delivery 2025-08-01
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFH5015TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfh5015trpbf-infineon-1282326
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFH5015TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfh5015trpbf-infineon-1282326
Infineon IRFH5015TRPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 150V |
| Drain-Source On Resistance-Max: | 31mΩ |
| Rated Power Dissipation: | 3.6W |
| Qg Gate Charge: | 36nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 10A |
| Turn-on Delay Time: | 9.4ns |
| Turn-off Delay Time: | 14ns |
| Rise Time: | 9.7ns |
| Fall Time: | 3.4ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Height - Max: | 0.81mm |
| Length: | 5mm |
| Input Capacitance: | 2300pF |
| Package Style: | PQFN 5 x 6 mm |
| Mounting Method: | Surface Mount |
Features & Applications
International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5015TRPBF that delivers the industry’s lowest on-state resistance (RDS(on)).
The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5015TRPbF is a 150V device delivers industry leading RDS(on) of only 31 mOhm (max.) at 10V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.
The 150V IRFH5015TRPBF is designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5015TRPBF features ultra low RDS(on) of 31mOhm (max.) combined with just 33 nC gate charge (Qg).
In addition to achieving excellent thermal performance, as a result of using the IRFH5015TRPBF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.
The IRFH5015TRPBF is a 150V, 31Mohms, 56a, PQFN(5x6) copper clip mosfet.
Available Packaging
Package Qty:
4000 per Reel
Package Style:
PQFN 5 x 6 mm
Mounting Method:
Surface Mount