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Infineon Technologies | IRFP4868PBF

Manufacturer Part #

IRFP4868PBF

Single N-Channel 300 V 32 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRFP4868PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 300V
Drain-Source On Resistance-Max: 32mΩ
Rated Power Dissipation: 517W
Qg Gate Charge: 270nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 70A
Turn-on Delay Time: 24ns
Turn-off Delay Time: 62ns
Rise Time: 16ns
Fall Time: 45ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 21.1mm
Length: 16.13mm
Input Capacitance: 10774pF
Package Style:  TO-247AC
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
400
Multiple Of:
25
Total
$1,124.00
USD
Quantity
Unit Price
10
$2.94
40
$2.89
125
$2.85
400
$2.81
1,250+
$2.74
Product Variant Information section