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Référence fabricant
IRLB3813PBF
Single N-Channel 30 V 1.95 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2332 | ||||||||||
Infineon IRLB3813PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRLB3813PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irlb3813pbf-infineon-4658704
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRLB3813PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irlb3813pbf-infineon-4658704
Infineon IRLB3813PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 1.95mΩ |
| Rated Power Dissipation: | 230W |
| Qg Gate Charge: | 57nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 260A |
| Turn-on Delay Time: | 36s |
| Turn-off Delay Time: | 33s |
| Rise Time: | 170s |
| Fall Time: | 60s |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.9V |
| Input Capacitance: | 8420pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The IRLB3813 is a member of the recently released, industrial-qualified 30V TO-220 HEXFET® power MOSFETs with extremely low gate charge (Qg) for applications including Uninterruptable Power Supply (UPS) inverters, low voltage power tools, ORing applications and netcom and server power supplies.
These robust MOSFETs feature IR’s latest generation Trench technology and offer very low on-state resistance (RDS(on)) to reduce thermal dissipation. In addition, the new devices’ ultra low gate
The devices are qualified to industrial grade and moisture sensitivity level 1 (MSL1). The 30V MOSFETs are available in a TO-220 package, are offered lead free and are RoHS compliant.
The IRLB3813PBF is a 30V 190A 1.95 Mohm Hexfet that comes in a TO-220 package, and is lead-free.
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole