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Infineon Technologies | IRLML2502TRPBF

Manufacturer Part #

IRLML2502TRPBF

N-Channel 20 V 0.045 Ohm Surface Mount HEXFET Power Mosfet - Micro3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2601
Product Specification Section
Infineon Technologies IRLML2502TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.08Ω
Rated Power Dissipation: 1.25W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 4.2A
Turn-on Delay Time: 7.5ns
Turn-off Delay Time: 54ns
Rise Time: 10ns
Fall Time: 26ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.2V
Technology: Si
Height - Max: 1.12mm
Length: 3.04mm
Input Capacitance: 740pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The IRLML2502TRPBF is a 20 V single N-Channel Hexfet Power Mosfet, available in low profile Micro-3 package.

It utilizes a advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in many applications.
 
Features:

  • Ultra Low On-Resistance
  • N-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1mm)
  • Available in Tape and Reel
  • Fast Switching
  • Lead-Free
  • Halogen-Free

Applications:

  • Battery
  • Load Management
  • Portable electronics
  • PCMCIA cards
Pricing Section
Global Stock:
99,000
USA:
99,000
On Order:Order inventroy details
1,551,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
Total
$1,245.00
USD
Quantity
Unit Price
3,000
$0.415
6,000
$0.41
12,000
$0.405
15,000+
$0.40
Product Variant Information section